[10a-E101-1~11] 15.4 III-V-group nitride crystals | The 87th JSAP Autumn Meeting 2026

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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[10a-E101-1~11]15.4 III-V-group nitride crystals

Thu. Sep 10, 2026 9:00 AM - 12:00 PM JST
Thu. Sep 10, 2026 12:00 AM - 3:00 AM UTC

E101 (First Year Education Bld. E Block)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-E101-1]Study on the improvement of luminescent properties through the InGaN strain relaxation mechanism unique to ELO stripes

〇Yoshinobu Kawaguchi¹, Motohisa Usagawa¹, Kazuma Takeuchi¹, Yoshinobu Matsuda², Mitsuru Funato², Takeshi Kamikawa¹ (1.Kyocera Corporation, 2.Kyoto Univ.)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E101-2]Fabrication and Characterization of Electric-Field Driven Phase Shifter Using InGaN Laser Waveguide

〇Hiroki Ogawa¹, Takumi Wada¹, Masahiro Uemukai¹, Ryuji Katayama¹ (1.The Univ. of Osaka)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[10a-E101-3]High power, Wavelength-Tunable, Single-Mode Monolithic Blue Diode Laser Based on Heterogeneous Integration of a GaN/SiON Waveguide

〇Ryosuke Morioka¹, Masanori Okada¹, Takahiro Serikawa¹, Takuya Hashimoto¹, Hisashi Ogawa¹ (1.Nichia Corporation)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[10a-E101-4]Development of a Blue-Wavelength Optical Phased Array toward Monolithic Integration with a GaN LD Light Source

〇Takeshi Toyama¹, Takahiro Serikawa¹, Hisashi Ogawa¹ (1.Nichia Corporation)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E101-5]Fabrication and Characterization of a Visible-Light GaN Modulator for Photonic Integration

〇Takumi Ito¹, Toshihiko Kishino¹, Hironobu Nakazawa¹, Takahiro Serikawa¹, Hisashi Ogawa¹ (1.Nichia Corporation)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[10a-E101-6]Lasing wavelength control in long-cavity VCSELs with AlInN/GaN DBRs

〇Taiki Kitamura¹, Shoki Arakawa¹, Haruki Soma¹, Shibahara Naoki¹, Atsunori Tokushi¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E101-7]Resonance Wavelength Control in GaN-based VCSELs with an AlInN Underlayer Using In-situ Monitoring

〇Haruki Souma¹, Shoki Arakawa¹, Taiki Kitamura¹, Naoki Shibahara¹, Atsunori Tokushi¹, Tetsuya Takeuchi¹, Motoaki iwaya¹, Satoshi Kamiyama¹ (1.Meijo Univ.)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E101-8]Development of Thermal Crosstalk Prediction for High-Density GaN-based VCSEL Arrays

〇Naoki Shibahara¹, Atsunori Tokushi¹, Taiki Kitamura¹, Haruki Soma¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹ (1.Meijo Univ.)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E101-9]High-efficiency(WPE >32%), high-power(38 mW) GaN-based vertical-cavity surface-emitting lasers
through Improvement of thermal characteristics

〇Atsunori Tokushi¹, Naoki Shibahara¹, Taiki Kitamura¹, Haruki Soma¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹ (1.Meijo Univ.)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[10a-E101-10]characterization of ingan gan cavity with direction controlled porous cladding

〇(M1)RYUMA YAMAGUCHI¹, Sotaro Iijima¹, Akihiko Kikuchi^1,2 (1.Sophia Univ, 2.Sophia Semiconductor Inst.)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[10a-E101-11]Optically Pumped Lasing Characteristics of InGaN/GaN Thin-Film Core Lasers with GaN/Air DBRs Incorporating Bottom Air Gap Layer

〇Sotaro Iijima¹, Ryuma Yamaguchi¹, Akihiko Kikuchi^1,2 (1.Sophia Univ, 2.Sophia Semiconductor Research Inst)

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