[10a-E308-1~9] 6.6 Probe Microscopy

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E308-4] Nanoscale observation of inversion-layer carrier distribution at the SiO₂/SiC interface using light-assisted scanning nonlinear dielectric microscopy

〇Akihiro Isaka^1,2, Nobuhide Yokota³, Kohei Yamasue² (1.Tohoku Univ., 2.RIEC, Tohoku Univ., 3.Shizuoka Univ.)

Keywords:

scanning nonlinear dielectric microscopy,scanning probe microscope,semiconductor

Scanning nonlinear dielectric microscopy (SNDM) has been utilized for the nanoscale evaluation of insulator-semiconductor interface characteristics. However, conventional SNDM has not enabled direct observation of inversion layer carriers or the related interface characteristics, which are crucial for MOSFET operation. In this study, we performed light-assisted local capacitance–voltage (CV) profiling of SiC and observed differential capacitance images using our recently developed light-assisted SNDM. As a result, we successfully visualized the behavior of inversion layer carriers for the first time.