[10a-PA4-1~26] 6.2 Carbon-based thin films

[10a-PA4-13] Fabrication and chemical-bonding state analysis of the a-CN_x:H thin films using the radio-frequency plasma CVD of teh gas mixture of N₂ and C₆ organic vapors

〇Haruhiko Ito¹, Suzuki Tsuneo¹, Saitoh Hidetoshi¹ (1.Nagaoka Univ. Tech.)

Keywords:

carbon nitride

Thin films of the hydrogenated amorphous carbon nitride were fabricated using the radio-frequency plasma CVD of the gas mixtures of the C₆ organic vapors with N2 gas. As the C₆ organic materials, benzen, n-hexane, and cyclo hexane were used. By fully suppressing the partial pressures of these organic vapors compared with the pressure of N2, high nitrogen contents, [N]/([N]+[C])=0.39-0.47 in the case of benzen, were attained. Similar results were obtained for the other organic materials. In addition, the peak-separation analysis of the XPS spectra were performed to analyze the chemical-bonding state of the films.