Presentation Information
[10a-PA4-16]Electronic Property Evaluation of Doped Layered Carbon Nitride Thin Films
〇(B)Sui Yabashi1, Hitoe Habuchi1 (1.Natl. Inst. Technol., Gifu Coll.)
Keywords:
layered carbon nitride thin films,photolithography,thermal chemical vapor deposition
The objective of this study is to evaluate the electrical properties of impurity-doped layered carbon nitride (CN) thin films synthesized via thermal chemical vapor deposition (CVD). Although CN thin-film MOS-FETs were fabricated via microfabrication techniques using photolithography, controlling the drain current with gate voltage wtihout light irradiation proved difficult. Consequently, a doping process using an aqueous solution of alkali metal chloride was applied to the CN thin films. The experimental methodology and results concerning the changes in optical transmittance spectra and electrical conductivity induced by this process will be reported.