[10a-S1-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[10a-S1-3] Temperature-dependent Device Characteristics and Reliability of Selectively Crystallized InGaOx GAA Nanosheet FETs

〇(D)Anlan Chen¹, Kiwoong Park¹, Kota Sakai¹, Xingyu Huang¹, Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo)

Keywords:

semiconductor,Oxide semiconductor

Monolithic 3D integration and 3D memory have emerged as promising approaches for high-density and energy-efficient computing systems. Oxide semiconductor (OS) FETs are attractive for these applications because of their low-temperature process, high mobility, and low leakage current. Recently, gate-all-around (GAA) nanosheet (NS) OS FETs have been studied to improve gate controllability and suppress short-channel effect. In this work, we fabricate selectively crystallized InGaOx (IGO) GAA NS FETs with 5 and 7 nm HfO2 and investigate their temperature-dependent operation and bias-stress reliability.