The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[10a-S1-1~9]13.5 Semiconductor devices/ Interconnect/ Integration technologies

Thu. Sep 10, 2026 9:00 AM - 11:15 AM JST
Thu. Sep 10, 2026 12:00 AM - 2:15 AM UTC
S1 (First Year Education S Bldg.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-S1-1][The 60th Young Scientist Presentation Award Speech] Self-Turn-On Analysis of a Trench Field-Plate Power MOSFET with Floating Electrodes

〇Satoshi Hoshida1, Daichi Ishii1, Shuhei Tokuyama1, Toshifumi Nishiguchi1, Takuma Hara1, Kenji Maeyama1, Tsuyoshi Kachi1, Hiroaki Kato1 (1.Toshiba Electronic Devices & Storage Corporation)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)English Presentation

[10a-S1-2][The 60th Young Scientist Presentation Award Speech] Study On the Statistical Variability of High-Performance Crystalline InGaOx Nanosheet Oxide Semiconductor FETs

〇Xingyu Huang1, Kota Sakai1, Anlan Chen1, Takanori Takahashi2, Mutsunori Uenuma3, Yukiharu Uraoka2, Takuya Saraya1, Toshiro Hiramoto1, Masaharu Kobayashi1 (1.IIS, Univ. of Tokyo, 2.NAIST, 3.AIST)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[10a-S1-3]Temperature-dependent Device Characteristics and Reliability of Selectively Crystallized InGaOx GAA Nanosheet FETs

〇(D)Anlan Chen1, Kiwoong Park1, Kota Sakai1, Xingyu Huang1, Masaharu Kobayashi1 (1.IIS, Univ. of Tokyo)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)English Presentation

[10a-S1-4]Low-Field Carrier Transport in Amorphous and Polycrystalline InGaOx FETs Investigated by Gated Hall Measurement

〇(D)Anlan Chen1, Xingyu Huang1, Kota Sakai1, Takuya Saraya1, Toshiro Hiramoto1, Mutsunori Uenuma2, Takanori Takahashi3, Yukiharu Uraoka3, Masaharu Kobayashi1 (1.IIS, Univ. of Tokyo, 2.AIST, 3.NAIST)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)English Presentation

[10a-S1-5]High-Field Carrier Transport and Velocity Saturation in Short-Channel InGaOx FETs

Xingyu Huang1, 〇(D)Anlan Chen1, Kota Sakai1, Takuya Saraya1, Toshiro Hiramoto1, Mutsunori Uenuma2, Takanori Takahashi3, Yukiharu Uraoka3, Masaharu Kobayashi1 (1.IIS, Univ. of Tokyo, 2.AIST, 3.NAIST)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)English Presentation

[10a-S1-6]Theoretical Investigation of Surface Orientation Dependent Donor Defect Formation in In2O3

〇Chitra Pandy1, Masaharu Kobayashi1 (1.The University of Tokyo)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[10a-S1-7]Enhancement-Mode Monolayer WSe2 pFETs with Record ION/IOFF at Contact Length of 30 nm

〇(D)Su Eric YuanChun1,2, Vincent Tung2, Tsung-En Lee1, Masaharu Kobayashi1 (1.Univ. of Tokyo, 2.National Yang Ming Chiao Tung Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-S1-8]Electrical Characterization of n-MOSFETs on Si(110) Vicinal Substrates

〇Ryotaro Shimura1, Yutong Chen1, Koji Matsumoto2, Akihiro Suzuki2, Hiroaki Yamamoto2, Kazuhito Matsukawa2, Mitsuru Takenaka1, Shinichi Takagi1,3, Kasidit Toprasertpong1 (1.Uinv. Tokyo, 2.SUMCO Corp., 3.Teikyo Univ.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[10a-S1-9]High Performance GeOI (111) nMOSFETs with Ge-Bi-Te S/D Contact

〇WENHSIN CHANG1, S. HATAYAMA1, N. OKADA1, T. IRISAWA1, T. MAEDA1, Y. SAITO2,1 (1.SFRC, AIST, 2.Tohoku Univ.)
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