[10a-S1-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)English Presentation

[10a-S1-5] High-Field Carrier Transport and Velocity Saturation in Short-Channel InGaOx FETs

Xingyu Huang¹, 〇(D)Anlan Chen¹, Kota Sakai¹, Takuya Saraya¹, Toshiro Hiramoto¹, Mutsunori Uenuma², Takanori Takahashi³, Yukiharu Uraoka³, Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo, 2.AIST, 3.NAIST)

Keywords:

semiconductor,Oxide semiconductor

Low-temperature oxide semiconductor (OS) FETs with high mobility and low leakage are attractive channel devices for monolithic 3D integration and 3D memory. To scale OS FETs for high-density integrated circuit applications, not only low-field mobility but also high-field carrier transport should be understood. In short-channel devices, current drivability is strongly affected by parasitic resistance and velocity saturation. In this work, we investigate high-field carrier transport characteristics in amorphous InGaOx (a-IGO) and polycrystalline InGaOx (poly-IGO) FETs using intrinsic transconductance (gm’) as a metric with temperature dependence. gm’ was obtained by correcting parasitic resistance from gm.