Presentation Information
[10a-S1-7]Enhancement-Mode Monolayer WSe2 pFETs with Record ION/IOFF at Contact Length of 30 nm
〇(D)Su Eric YuanChun1,2, Vincent Tung2, Tsung-En Lee1, Masaharu Kobayashi1 (1.Univ. of Tokyo, 2.National Yang Ming Chiao Tung Univ.)
Keywords:
2D material,Contact gate pitch
We demonstrate enhancement-mode monolayer (1L) WSe2 pFETs, under aggressive contact-gate pitch (CGP) scaling while maintaining competitive ION and record high ION/IOFF ratio of >108. The device performance is improved by transport in single-domain CVD-grown 1L-WSe2, controllable UV-ozone (O3) p-doping, and selective contact doping by TeO. At IOFF = 0.3pA/µm defined at VG = 0V, the 1L-WSe2 pFET under channel length (LCH) of 50nm exhibits a record ID,Max of 0.9mA/µm at VD = −1V, a highest peak transconductance (Gm) of ~570 µS/µm, a lowest DIBL of ~50 mV/V and a contact resistance (RC) of ~407 Ω·µm. With further aggressive contact length (LC) scaling, enhancement-mode operation is preserved with an ION/IOFF ~1.8 × 108 and a transfer length (LT) below 100 nm. These results validate the scalability of 2D p-channel devices pursuing optimal performance, power, area (PPA) for future CMOS logic technologies.