[10p-A23-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[10p-A23-12] Phase Control of Zinc-Blende and Wurtzite GaAs Nanowires by Self-Catalyzed Growth on 2-inch SiO_x/Si(111) Wafers

〇Keisuke Minehisa¹, Yoshitaka Taniyasu², Kazuyuki Hirama², Kazuhide Kumakura¹, Fumitaro Ishikawa¹ (1.Hokkaido Univ. RCIQE, 2.NTT BRL)

Keywords:

nanowire,III-V compound semiconductor,molecular beam epitaxy (MBE)