[10p-A23-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy | The 87th JSAP Autumn Meeting 2026

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Oral presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[10p-A23-1~16]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Sep 10, 2026 2:00 PM - 6:30 PM JST
Thu. Sep 10, 2026 5:00 AM - 9:30 AM UTC

A23 (Faculty of Info. Sci. & Tech. Bldg.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-A23-1]Cavity Orientation Dependence of InAs Quantum Dot Lasers on InGaAs Metamorphic Layers

〇JINKWAN KWOEN^1,2, Hiroki Inoue², Masahiro Kakuda², Atsushi Matsumoto¹, Naokatsu Yamamoto¹, Kouichi Akahane¹, Yasuhiko Arakawa² (1.NICT, 2.Univ. Tokyo)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[10p-A23-2]Enhanced net modal gain of near the O-band InAs/GaAs quantum dot lasers by increasing stacking number

〇Masahiro Kakuda¹, Yasuhiko Arakawa¹ (1.The Univ. of Tokyo)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[10p-A23-3]Kinetic Monte Carlo simulation of GaSb/GaAs quantum ring growth

〇Yusuke Oteki¹, Yoshitaka Okada¹ (1.RCAST)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[10p-A23-4]Fabrication of quantum discs by growth interruption during stacked submonolayer growth

〇Haruto Okuizumi¹, Noel von Wattenwyl², Rhenish Simon¹, Ronel Roca¹, Itaru Kamiya¹ (1.Toyota Tech. Inst., 2.ETH)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A23-5]Characterization of InP nanowires on Si substrates by selective-area MOVPE

〇Yuki Azuma¹, Keita Taniyama¹, Wei Wen Wong², Junichi Motohisa¹, Hark Hoe Tan², Katsuhiro Tomioka¹ (1.RCIQE, 2.ANU)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A23-6]Characterization of thermal annealing process in selective-area growth of InGaAs nanowires

〇Ryuta Nakamura^1,2, Keita Taniyama^1,2, Yuki Azuma^1,2, Doma Hachimiya^1,2, Katsuhiro Tomioka^1,2 (1.Hokkaido Univ., 2.RCIQE)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A23-7]Unique Lattice Structural Changes Induced by Nitrogen δ-Doping in GaAs Nanowires

〇Mahiro Sano¹, Keisuke Minehisa¹, Kantaro Sugihara¹, Fumitaro Ishikawa¹, Yoshitaka Taniyasu², Kazuyuki Hirama², Kazuhide Kumakura¹, Fumitaro Ishikawa¹ (1.Hokkaido Univ. RCIQE, 2.NTT BRL)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A23-8]Strain Characterization of GaAs/GaNAs/GaAs Core-multishell Nanowires with Contoroled GaNAs Shell Thickness

〇Yusuke Shiomi^1,2, Mahiro Sano^1,2, Keisuke Minehisa^1,2, Fumitaro Ishikawa¹ (1.Hokkaido Univ. RCIQE, 2.Hokkaido Univ. IST)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[10p-A23-9]Room temperature continuous-wave operation of telecom-band nanowire lasers

〇Guoqiang Zhang^1,2, Xuejun Xu¹, Masato Takiguchi^1,2, Hideki Gotoh^3,1, Haruki Sanada¹ (1.NTT BRL, 2.NTT NPC, 3.Hiroshima Univ.)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[10p-A23-10]Growth of InAs thin films by lateral overgrowth from InAs nanowires on Si substrates (2)

〇Toshiyuki Kaizu^1,2, Naoya Miyashita^2,1, Koichi Yamaguchi^2,1 (1.QFCD2 center, Univ. Electro-Comm., 2.Dep. of Eng. Sci., Univ. Electro-Comm.)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[10p-A23-11]Self-Catalyzed Growth of Pure Zinc-Blende GaAs Nanowires on SiO_x/Si(111) Wafers via Droplet Etching

〇Keisuke Minehisa¹, Yoshitaka Taniyasu², Kazuyuki Hirama², Kazuhide Kumakura¹, Fumitaro Ishikawa¹ (1.Hokkaido Univ. RCIQE, 2.NTT BRL)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[10p-A23-12]Phase Control of Zinc-Blende and Wurtzite GaAs Nanowires by Self-Catalyzed Growth on 2-inch SiO_x/Si(111) Wafers

〇Keisuke Minehisa¹, Yoshitaka Taniyasu², Kazuyuki Hirama², Kazuhide Kumakura¹, Fumitaro Ishikawa¹ (1.Hokkaido Univ. RCIQE, 2.NTT BRL)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[10p-A23-13]Improvement of Vertical InGaAs Nanowire Yield in Selective-Area Growth on Si Using Metal/Insulator Composite Mask

〇Keita Taniyama¹, Hitoshi Watanabe¹, Yuki Azuma¹, Katsuhiro Tomioka¹ (1.GS of IST and RCIQE, Hokkaido Univ.)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[10p-A23-14]Effect of Quantum Well Number on the Absorption Edge Wavelength of GaAs/GaNAs/GaAs Core Multi-Shells Nanowires

〇Kantaro Sugihara^1,2, Keisuke Minehisa^1,2, Mahiro Sano^1,2, Ishikawa Fumitaro² (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE)

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[10p-A23-15]Molecular Beam Epitaxial Growth of GaAs/GaNAsBi/AlGaAs Core-Multishell Quantum Well Nanowires

〇Yoshifumi Shiota^1,2, Takuto Goto^1,2, Keisuke Minehisa^1,2, Fumitaro Ishikawa² (1.Hokudai Univ. IST RCIQE, 2.RCIQE)

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[10p-A23-16]Active-layer position and room-temperature PL intensity in GaInNAs triple-quantum-well core–multishell nanowires

〇Kaito Nakama^1,2, Mahiro Sano^1,2, Keisuke Minehisa^1,2, Akio Higo³, Fumitaro Ishikawa¹ (1.Hokkaido Univ. RCIQE, 2.Hokkaido Univ. IST, 3.Tokyo Denki Univ.)

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