Presentation Information
[10p-B21-7]Quantum annealing machine using semiconductor LSI
〇Tetsufumi Tanamoto1 (1.Teikyo Univ.)
Keywords:
quantum annealing,flash memory,qubit
While superconducting quantum annealing machines (QAMs) are commercialized, semiconductor qubits remain in early development due to high fabrication costs. This presentation proposes leveraging mature, commercial 2D NAND flash memory (floating gate, FG) manufacturing processes for QAM architectures. By modeling the FG array as a capacitive network, unavoidable Coulomb interactions between cells are utilized as Ising interactions. Qubits operate near the degeneracy point in the single-electron regime. To enable arbitrary logical coupling, a minor-embedding method must be applied, which requires introducing a new structure to the array. Future work involves detailed QAM design tailored to the latest FG structures.