Presentation Information
[10p-C212-8]Demonstration of Rib-Waveguide Membrane Lasers Fabricated by MOVPE Selective-Area Growth on Directly Bonded InP-on-Si Substrates
〇Hiroya Homma1, Takuro Fujii1, Tomonari Sato1, Shinji Matsuo1 (1.NTT, inc.)
Keywords:
membrane laser,III-V photonics devices on Si platform,selective-area growth
To address the rapidly increasing communication capacity demands inside and between data centers driven by the proliferation of AI, we proposed a rib-waveguide membrane laser for application as a high-output light source in electro-absorption modulated lasers (EMLs). A novel membrane device was fabricated by forming an active region through MOVPE selective-area growth on an InP slab with a lateral pin junction. Room-temperature continuous-wave lasing was demonstrated using an etched-mirror Fabry–Pérot cavity with cavity lengths ranging from 200 to 600 µm. In addition, comparable slope efficiencies were obtained for devices with different cavity lengths. These results demonstrate the feasibility of rib-waveguide membrane lasers fabricated by selective-area growth and provide a technological foundation for future membrane EML light sources.