[10p-C309-1~15] 15.5 Group IV crystals and alloys

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)English Presentation

[10p-C309-5] Infrared-Transparent Conductive Oxide Integrated p-GeSn/n-Ge Photodetectors for Broadband Infrared Sensing

〇Rahmat Hadi Saputro¹, Tomo Tanaka², Hiroyuki Ishii¹, Shota Torimoto³, Kaito Shibata³, Yoshiki Kato³, Shigehisa Shibayama³, Masashi Kurosawa³, Osamu Nakatsuka³, Tatsuro Maeda¹ (1.AIST, 2.NEC Corp., 3.Nagoya Univ.)

Keywords:

GeSn,TCO,Photodetector

GeSn is a promising material for infrared photodetectors because its bandgap can be tailored by controlling the Sn composition. In particular, incorporating 10% or more Sn extends the detection wavelength from the short-wave infrared (SWIR) into the mid-wave infrared (MWIR) region. Moreover, the compatibility of GeSn-based group-IV materials with Si technology provides a viable route toward photonic integrated devices. In this work, we demonstrate a front-illuminated p-GeSn/n-Ge photodetector grown by molecular beam epitaxy (MBE) and integrated with an infrared-transparent conductive oxide (iTCO) film.