The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation15 Crystal Engineering : 15.5 Group IV crystals and alloys

[10p-C309-1~15]15.5 Group IV crystals and alloys

Thu. Sep 10, 2026 2:00 PM - 6:00 PM JST
Thu. Sep 10, 2026 5:00 AM - 9:00 AM UTC
C309 (Faculty of Engineering C Block)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-C309-1]Control of lattice strain in Ge wire structures on Si using AlN tunable stressor

〇Soki Matsushita1, Jose A. Piedra-Lorenzana1, Takeshi Hizawa1, Yasuhiko Ishikawa1 (1.Toyohashi Univ. Tech.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[10p-C309-2]Trench-Filling Ge Layers on Si for Surface-Illuminated Photodetectors

〇So Nozaki1, Jose A. Piedra-Lorenzana1, Daisuke Akai1, Takeshi Hizawa1, Yasuhiko Ishikawa1 (1.Toyohashi Univ. Tech)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[10p-C309-3]Light Emission Characteristics of Ge Microbridge LEDs

〇Ryosuke Usui1, Ayaka Odashima1,2, Nonoka Nagashima1, Kentarou Sawano1, Michihiro Yamada1, Hiroshi Nohira1 (1.Tokyo City Univ., 2.IIS Univ. of Tokyo)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[10p-C309-4]Temperature Dependence of High Schottky Barrier Height at p-Type Ge/ICO:H Interfaces

〇Tatsuro Maeda1, Hiroyuki Ishii1, Chia-Tsong Chen1, Rahmat Hadi Saputro1, Takashi Koida1, Wen Hsin Chang1 (1.AIST)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)English Presentation

[10p-C309-5]Infrared-Transparent Conductive Oxide Integrated p-GeSn/n-Ge Photodetectors for Broadband Infrared Sensing

〇Rahmat Hadi Saputro1, Tomo Tanaka2, Hiroyuki Ishii1, Shota Torimoto3, Kaito Shibata3, Yoshiki Kato3, Shigehisa Shibayama3, Masashi Kurosawa3, Osamu Nakatsuka3, Tatsuro Maeda1 (1.AIST, 2.NEC Corp., 3.Nagoya Univ.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-C309-6]Effect of the Si-cap layer on the detection characteristics of PN-junction Ge1-xSnx infrared detectors

〇Taiyo Yajima1, Tomo Tanaka3, R. H. Saputro4, Hiroyuki Ishii4, Shigehisa Shibayama1, Masashi Kurosawa1, Mitsuo Sakashita1, Osamu Nakatsuka1,2, Tatsuro Maeda4 (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.NEC, 4.AIST)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-C309-7]High crystallinity Ge0.80Sn0.20 epitaxial growth on Si substrate using sputtering method

〇Kousaku Goto1, Shigehisa Shibayama1, Tomo Tanaka2, Yasutomo Omori2, R. H. Saputro3, Hiroyuki Ishii3, Tatsuro Maeda3, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,4 (1.Grad. Sch. Eng., Nagoya Univ., 2.NEC, 3.AIST, 4.IMaSS Nagoya Univ.)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[10p-C309-8]Growth of Zirconium (Zr)-Doped Germanium (Ge) Alloy

〇(M1)Tensei Tajima1, Tomo Horota1, Yuto Kawabata1, Yasuhiko Ishikawa1, Keisuke Yamane1 (1.Toyohashi Tech)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[10p-C309-9]Growth of GaGeSb Alloys with High GaSb Content for New Band Engineering

〇Tomo Horota1, Fuga Suzuki1, Yuto Kawabata1, Yasuhiko Ishikawa1, Keisuke Yamane1 (1.Toyohasi Tech)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[10p-C309-10]Effects of High-Speed CW Laser Annealing Conditions on Electrical Properties of Poly-Ge Thin Films

〇YUTA GOTO1,2, Matsumura Ryo1, Fukata Naoki1,2 (1.NIMS, 2.Univ. of Tsukuba)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-C309-11]Effect of Pressure Application on Polycrystalline Ge Thin-Film Growth

〇Akira Ogawa1, Koki Nozawa1, Yutaka Kiyono1, Takashi Suemasu1, Kaoru Toko1 (1.Tsukuba Univ.)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[10p-C309-12]Effect of MgO Insulating Films on Au-Induced Lateral Crystallization of Amorphous Ge Thin Films

〇(B)Yushi Fuchiwaki1, Haruki Yamada1, Naoto Mitsunaga1, Haruki Ezaki1, Kenichiro Takakura1, Taizoh Sadoh2, Isao Tsunoda1 (1.NIT, Kumamoto College, 2.Kyushu Univ.)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-C309-13]Ge nanosheet formation on thermally grown SiO2/Si structure by N scavenging

〇(M2)Kotaro Onishi1,2, Ryotaro Sakakibara1, Yasumitsu Miyata1, Takuji Hosoi1,2 (1.NIMS, 2.Kwansei Gakuin Univ.)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-C309-14]Effect of Water Amount Added during Synthesis on the Structural and Optical Properties of Methylated Germanane

〇Hiromu Kudo1, Yuta Ito1,2, Kaito Nakajima3, Masashi Kurosawa3, Osamu Nakatsuka3,4, Atsushi Ogura1,5 (1.Meiji Univ., 2.JSPS Research Fellow, 3.Nagoya Univ., 4.IMaSS, 5.MREL)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[10p-C309-15]First-Principles Calculations of N-Doping Properties in Bulk and Quantum-Dot 3C-SiC

〇Shunsuke Kaga1, Hiroshi Katsumata1 (1.Meiji Univ.)
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