Presentation Information
[10p-E101-5]Three Million Years Opposite State Data Retention in Ferroelectric Nitrides
〇Simon Fichtner1,2 (1.Kiel University, 2.Fraunhofer ISIT)
Keywords:
III-N,Memory
III-N ferroelectrics possess unique advantages when it comes to data retention under adverse conditions such as extreme temperatures or long storage times – which benefits from their large Pspont as well as their large coercive field Ec. Ferroelectric Random Access Memory (FeRAM)-like applications for data storage are typically limited by opposite state retention, which is itself determined by imprint, i.e. drifts of Ec. For Al1-xScxN, we could recently demonstrate that the material class can readily surpass industrial harsh environment standards (10 years retention at 150°C) in a FeRAM scenario. Since then, we could furthermore reveal that the large magnitude of Pspont in III-N ferroelectrics can boost data retention by another six orders of magnitude. The key to this impressive improvement towards what might be virtually perpetual data storage lies in only partially switching the storage capacitor. Thereby, the initial imprint variations associated with switching can be substantially reduced, which directly results in improved opposite state retention. Using the same charge injection based model as generally employed for FeRAM yields good agreement with data measured on Al0.85Sc0.15N and Al0.71Sc0.23B0.06N and projects data retention for at least 1014 s or three million years at 150°C, when using partially switched states.