[10p-E101-1~11] Frontiers of Research on Ferroelectric Semiconductors | The 87th JSAP Autumn Meeting 2026

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Symposium (Oral)Symposium : Frontiers of Research on Ferroelectric Semiconductors

[10p-E101-1~11]Frontiers of Research on Ferroelectric Semiconductors

Thu. Sep 10, 2026 1:30 PM - 6:00 PM JST
Thu. Sep 10, 2026 4:30 AM - 9:00 AM UTC

E101 (First Year Education Bld. E Block)

1:30 PM - 1:35 PM JST(4:30 AM - 4:35 AM UTC)

[10p-E101-1]Opening and Introduction

〇Motoaki Iwaya¹ (1.Meijo Univ.)

1:35 PM - 2:05 PM JST(4:35 AM - 5:05 AM UTC)

[10p-E101-2]Advances and Developments in Nitride Semiconductors
Recent Research Results at AIST STRI

〇Morito Akiyama¹, Kenji Hirata¹, Ayun Auggraini¹, Masato Uehara¹ (1.AIST)

2:05 PM - 2:35 PM JST(5:05 AM - 5:35 AM UTC)

[10p-E101-3]Impact of Spontaneous and Piezoelectric Polarization Charges on Optical and Electrical Properties of Nitride Semiconductors

〇Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ.)

2:35 PM - 2:50 PM JST(5:35 AM - 5:50 AM UTC)

[10p-E101-4][The 60th Young Scientist Presentation Award Speech] RT-CW Operation of Sapphire-Based AlGaN UV-B Laser Diodes and Its Design Guidelines

〇Rintaro Miyake¹, Takumu Saito¹, Shion Kamiya¹, Ryota Watanabe¹, Kenta Kitagawa¹, Tomoya Tanikawa¹, Sho Iwayama¹, Hideto Miyake², Koichi Naniwae³, Yoshito Jin⁴, Toramaru Masamitsu⁴, Tatsuya Matsumoto⁴, Yoshihiro Shimazaki⁴, Hironori Torii⁵, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ., 3.Ushio Inc., 4.JSW., 5.JSW Afty.)

3:05 PM - 3:35 PM JST(6:05 AM - 6:35 AM UTC)English Presentation

[10p-E101-5]Three Million Years Opposite State Data Retention in Ferroelectric Nitrides

〇Simon Fichtner^1,2 (1.Kiel University, 2.Fraunhofer ISIT)

3:35 PM - 4:05 PM JST(6:35 AM - 7:05 AM UTC)

[10p-E101-6]Polarization-Engineered Ferroelectric Nitride Photonic Integrated Devices

〇Ryuji Katayama¹, Masahiro Uemukai¹, Tomoyuki Tanikawa² (1.Grad. Sch. of Eng., The Univ. of Osaka, 2.Fac. Sci. & Tech., Meijo Univ)

4:05 PM - 4:20 PM JST(7:05 AM - 7:20 AM UTC)

[10p-E101-7][The 60th Young Scientist Presentation Award Speech] X-ray Spectroscopic Characterization of Surface Oxidation of ScAlN and NbAlN

〇Hikaru Sasaki¹, Takahito Takeda¹, Akihira Munakata¹, Kouei Kubota¹, Kosuke Joya¹, Tomoya Fuji¹, Tomoya Okuda², Souta Kurogi², Masaki Kobayashi¹, Atsushi Fujimori¹, Atsushi Kobayashi², Ryosho Nakane¹, Masakazu Sugiyama¹, Takuya Maeda¹ (1.Univ. of Tokyo, 2.Tokyo Univ. of Science)

4:35 PM - 5:05 PM JST(7:35 AM - 8:05 AM UTC)

[10p-E101-8]Ferroelectricity of doped-ZnO thin films

〇Isaku Kanno¹, Sang Hyo Kweon¹, Hideaki Adachi¹ (1.Kobe Univ.)

5:05 PM - 5:35 PM JST(8:05 AM - 8:35 AM UTC)

[10p-E101-9]Electronic Device Applications of Polarization Doping in Nitride Materials

〇Yoshio Honda^1,2,3, Yuto Yamada⁴, Ryo Wakizako⁴, Takeru Kumabe⁴, Atsushi Tanaka¹, Maki Kushimoto⁴, Hiroshi Amano¹ (1.IMaSS, Nagoya Univ., 2.D Center, Nagoya Univ., 3.IAR, Nagoya Univ., 4.Grad. Sch. Eng., Nagoya Univ.)

5:35 PM - 5:50 PM JST(8:35 AM - 8:50 AM UTC)

[10p-E101-10]Analysis of electron mobility in high-Al-content distributed polarization-doped AlGaN

〇Seiya Kawasaki¹, Masanobu Hiroki¹, Kazuyuki Hirama¹, Yoshitaka Taniyasu¹ (1.NTT BRL)

5:50 PM - 6:00 PM JST(8:50 AM - 9:00 AM UTC)

[10p-E101-11]Closing

〇Takeshi Yoshimura¹ (1.Toyohashi Univ. Tech.)

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