Presentation Information

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[10p-E202-9]Melting properties of anti-21222-type layered oxychalconigenides

〇Takahiro Kato^1,2, Yuki Iwasa¹, Shigeyuki Ishida¹, Hiroshi Eisaki¹, Hiraku Ogino¹ (1.AIST, 2.Tokyo Univ. of Sci.)

Keywords:

mixed-anion compounds,layered compounds,single crystal

While layered mixed-anion compounds consisting of stacked oxide and selenide layers exhibit a wide variety of functionalities, they are generally thought to undergo incongruent melting, leaving research using single crystals scarce. Meanwhile, we have demonstrated that among layered oxychalcogenides, compounds with the 21222-type structure exhibit congruent melting behavior, enabling the growth of single crystals through melt solidification. In this study, we evaluated the melting characteristics of RE₂TM₂Ch₂O₃ (RE=La-Sm, TM=Mn, Fe, Co, Ch =S, Se) which features an inverted anion/cation arrangement of the 21222-type structure to investigate the presence or absence of congruent melting behavior.

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