Presentation Information
[10p-E301-9]Effects of Crystal Orientation, Doping and Crystal Phase on Near-Infrared Color Centers in Ga2O3
〇(M2)Keidai Toyoshima1, Riena Jinno1, Satoshi Iwamoto1,2 (1.RCAST, Univ. of Tokyo, 2.IIS, Univ. of Tokyo)
Keywords:
gallium oxide,color center,ultrawide bandgap semiconductor
Color centers emitting in the telecommunication band in gallium oxide are promising for quantum applications; however, their origin remains unclear. In this study, photoluminescence properties of gallium oxide samples with different crystal phases, surface orientations, and doping conditions were compared to elucidate the origin of the color centers and enable density control. As a result, orientation-dependent emission and emission quenching by Sn doping were observed in the β phase, whereas no emission was detected in the α phase. These results indicate that the formation of the color centers strongly depends on the crystal phase and doping conditions. Future investigations into the mechanisms responsible for the absence of the emission are expected to contribute to the intentional introduction and property control of the color centers.