The 87th JSAP Autumn Meeting 2026
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[10p-E301-1~20]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 10, 2026 1:15 PM - 7:00 PM JST
Thu. Sep 10, 2026 4:15 AM - 10:00 AM UTC
E301 (First Year Education Bld. E Block)
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-1]Structural Characterization of High-Density Nitrogen-Doped Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

〇Toshiki Nakaoka1, Kohki Tsujimoto1, Yusuke Teramura1, Shoma Takeda1, Satoko Honda1, Masataka Higashiwaki1 (1.Osaka Metropolitan Univ.)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-2]Electrical Characterization of Nitrogen-Doped (AlGa)2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

〇Kohki Tsujimoto1, Toshiki Nakaoka1, Yusuke Teramura1, Shoma Takeda1, Satoko Honda1, Masataka Higashiwaki1 (1.Osaka Metropolitan Univ.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-3]Nitrogen Doping Into Ga2O3 by Hot Implantation Process

〇(M1)Yuma Matsumoto1, Daisuke Matsuo2, Shun Konno2, Kosuke Usui2, Shinya Takemura2, Kouhei Tanaka2, Masataka Higashiwaki1 (1.Osaka Metropolitan Univ., 2.Nissin Ion Equipment Co., Ltd)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-E301-4]Evaluating Thermal Diffusion Behavior of Ion-Implanted Nitrogen in (010) β-Ga2O3

〇Takumi Ohtsuki1, Masataka Higashiwaki1,2 (1.NICT, 2.Osaka Metropolitan Univ.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-5]Comparison of substrate orientations in homoepitaxial growth of N-doped β-Ga2O3 layers by HVPE

〇(D)Kentaro Chukudaaru Kakuta1, Yutaka Koga1, Takami Kawata1, Takatoshi Kikawa1, Yoshinao Kumagai1 (1.Tokyo Univ. of Agric. and Tech.)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-6]Characterization of the Local Structure and Electronic Properties of Nb-Doped (Ga0.75In0.25)2O3 Thin Films

〇(M2)Masaharu Watanabe1,2, Masaaki Kobata3, Tatsuo Fukuda3, Atsushi Ogura1,4, Takahiro Nagata2,1 (1.Meiji Univ., 2.NIMS, 3.JAEA, 4.MREL)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-7]Comparative study of TMAl and TEAl decomposition and hydrocarbon combustion mechanisms during (AlxGa1-x)2O3 growth by MOVPE

〇Yuma Terauchi1, Shogo Sasaki2, Junya Yoshinaga1,3, Rie Togashi4, Makiko Furuishi5, Yoshihiko Takinami5, Masato Ishikawa6, Akira Kusaba7, Yoshinao Kumagai1 (1.Tokyo Univ. of Agric. and Tech., 2.Kyushu Univ., 3.Nippon Sanso Corporation, 4.Sophia Univ., 5.Kanomax Analytical Inc., 6.Gas-Phase Growth Ltd., 7.RIAM, Kyushu Univ.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-8]Electrical properties of Si-doped AlScGaO thin films grown on vicinal β-Ga2O3 (100) substrates

〇Kazuki koreishi1, Kohei Yoshimatsu1, Akira Ohtomo1 (1.Science Tokyo)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-9]Effects of Crystal Orientation, Doping and Crystal Phase on Near-Infrared Color Centers in Ga2O3

〇(M2)Keidai Toyoshima1, Riena Jinno1, Satoshi Iwamoto1,2 (1.RCAST, Univ. of Tokyo, 2.IIS, Univ. of Tokyo)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-10]Effects of plasma and growth temperature on Eu-doped Ga2O3 grown by sputtering-assisted MOCVD

〇(M1)Takuto Oshima1, Yoshikata Nakajima2, Masakazu Tane1, Jun Tatebayashi1,3 (1.The Univ. of Osaka, 2.INSD, 3.QIQB)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[10p-E301-11]Surface morphology of HVPE-grown β-Ga2O3 layers on (011) substrates

〇Takayoshi Oshima1, Yuichi Oshima1 (1.NIMS)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-12]Micro Cracks : Killer Defects in (011) HVPE-Grown β-Ga2O3 Schottky Barrier Diodes

〇(M1C)Shotaro Nakaniwa1, Eguchi Masanori2, Sato Makoto1, Saha Niloy Chandra1, Lin Chiahung3, Sasaki Kohei3, Kasu Makoto1 (1.Dept. Sci. Eng. Saga Univ., 2.Saga Univ. Synchrotron., 3.Novel Crystal Technology, Inc.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[10p-E301-13]Structure of Polycrystalline Defects in (011) HVPE Ga2O3 Schottky Barrier Diodes

〇Masanori Eguchi1, Nakaniwa Shotaro2, Saha Niloy Chandra2, Lin Chia-Hung3, Sasaki Kohei3, Kasu Makoto2 (1.Saga Univ. Synchro., 2.Dept. Sci. Eng. Saga Univ., 3.Novel Crystal Technology, Inc.)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[10p-E301-14]Pseudocubic Framework of β-Ga2O3 for Rationalizing Epitaxial Relationships of NiO Films

〇Takumi Ikenoue1, Masaki Yono1, Takayoshi Oshima2, Masao Miyake1, Toshiya Doi1 (1.Kyoto Univ., 2.NIMS)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-15]Epitaxial Growth of NiO on β-Ga2O3 (011) Substrates by Mist CVD Method

〇Masaki Yono1, Takumi Ikenoue1, Takayoshi Oshima2, Toshiya Doi1 (1.Kyoto Univ., 2.NIMS)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[10p-E301-16]Layer transfer of (010) β-Ga2O3 onto SiO2/Si substrates via hydrogen implantation for heterogeneous integration

〇Yun Jia1, Jewook Jeon1, Kedai Toyoshima1, Ziyi Chen1, Riena Jinno1, Satoshi Iwamoto1,2 (1.RCAST Univ.Tokyo, 2.IIS Univ.Tokyo)
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-17]Enhancement-Mode Ga2O3 CAVETs Fabricated Using Hot Implantation

〇(DC)Jun Morihara1, Daisuke Matsuo2, Shun Konno2, Kosuke Usui2, Shinya Takemura2, Zhenwei Wang3, Romualdo A. Ferreyra1, Kohei Tanaka2, Masataka Higashiwaki1 (1.Osaka Metropolitan Univ., 2.Nissin Ion Equipment Co., Ltd., 3.NICT)
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[10p-E301-18]Measurement of the diffusion coefficients of n-type and p-type dopants in β-Ga2O3

〇(M2)Sasuga Hasegawa1, Ryusuke Nakamura1, Takeyuki Suzuki2 (1.Univ. of Shiga Pref., 2.SANKEN Osaka Univ.)
6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)English Presentation

[10p-E301-19]Diffusion suppression of Mg and high performance β-Ga2O3 current blocking layers by N+Mg co-doping approach

〇Fenfen Fenda Florena1, Hironobu Miyamoto1, Yuki Koishikawa1, Hirofumi Shinohara1, Kohei Sasaki1, Akito Kuramata1 (1.NCT)
6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)

[10p-E301-20]Heavy n-type doping of (001) β-Ga2O3 by HVPE

〇Yuichi Oshima1, Takayoshi Oshima1, Chia-Hung Lin2, Kohei Sasaki2 (1.NIMS, 2.Novel Crystal Technology)
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