[10p-E311-1~13] 7.2 Applications and technologies of electron beams

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E311-9] Fabrication of Graphene/h-BN/Nb Planar-Type Electron Emission Device for Highly Monochromatic Electron Beams

〇Ryo Matsuda^1,2, Kosuke Matsuzaki², Hiroshi Takashima², Hiromasa Murata², Masayoshi Nagao², Yoichiro Neo¹, Katsuhisa Murakami² (1.Shizuoka Univ., 2.AIST.)

Keywords:

electron emission,h-BN,graphene

We fabricated a graphene/h-BN/Nb planar-type electron emission device to achieve highly monochromatic electron emission. Our objective was to reflect the sharp density of states (DOS) peak originating from the d-orbitals of Nb in the energy distribution of the emitted electrons. The fabricated device achieved a high current density of 5 A/cm² when a gate voltage of 15 V was applied. Furthermore, despite using a relatively thick h-BN insulating layer of 13 nm, a narrow energy distribution with a full width at half maximum (FWHM) of 0.3 eV was obtained.