Presentation Information
[10p-N101-14]Evaluation of the Temperature Dependence of Group IV-V Center Creation
in Atmospheric Pressure Thermal Treatment
〇(M1)Tomoya Umetsu1,2, Shinobu Onoda1, Kousuke Kimura1, Ikki Shingai1,2, Tomoya Hasunuma1,2, Biswajit Biswas1, Kouta Takenaka1, Hayato Sone2 (1.QST, 2.Gunma Univ.)
Keywords:
quantum material,group IV vacancy,diamond
In this presentation, we discuss the temperature dependence of Group IV-V center formation during atmospheric pressure heat treatment.We evaluated samples of Si-, Ge-, and Sn-doped diamond that underwent atmospheric pressure heat treatment in the temperature range of 1000–1800 °C using photoluminescence measurements to identify the optimal temperature for Group IV-V center formation.
