[10p-N101-1~17] CS.8 Code-sharing session of 6.2 &KS1

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N101-5] Fabrication of heteroepitaxial diamond crystals grown on Ir/sapphire substrates using the epitaxial lateral overgrowth method

〇Yusuke Morita¹, Osamu Maida¹, Seong-Woo Kim², Koki Matsumoto¹, Shuhei Ichikawa¹, Kazunobu Kojima¹ (1.The Univ. of Osaka, 2.Orbray Co., Ltd.)

Keywords:

heteroepitaxial diamond

We attempted to improve the crystal quality of (001) diamond crystals grown on Ir/sapphire substrates by epitaxial lateral overgrowth from stripe-patterned nucleation regions. Raman spectroscopy analyses of the as-grown surface and cross-sections perpendicular to the stripe direction revealed improved crystallinity in the lateral overgrowth regions. These results indicate that this growth method is effective for improving the crystal quality of heteroepitaxial diamond crystals.