Presentation Information
[10p-PA4-18]Performance improvement of dinaphthothienothiophene-based organic floating-gate memories for application to artificial synaptic devices
〇(M2)Keita Yamazaki1, Takashi Kobayashi1,2, Hiroyoshi Naito1,2,3, Takashi Nagase1,2 (1.Osaka Metropolitan Univ., 2.Osaka Metropolitan Univ. RIMED, 3.Ritsumeikan Univ. RISA)
Keywords:
floating-gate,artificial synaptic device
We fabricated an organic floating-gate memory based on DNTT incorporating Ag nanoparticle floating gates and an organic tunneling insulator composed of a PMMA:PCBM composite. The fabricated memory devices exhibit good FET characteristics with a low off state current, as well as large threshold voltage shifts in both positive and negative directions. Furthermore, by tuning the amplitude of gate voltage pulses, the memory devices achieve highly linear conductance modulation that suitable for pattern recognition tasks,