Presentation Information
[10p-PB3-14]Epitaxial growth of Mn4−xZnxN films with room temperature magnetization compensation
〇Ren Kobayashi1, Aoi Hatate1, Yuki Sobukawa1, Sosi Akita1, Kenta Amemiya2, Takashi Suemasu1 (1.Univ. of Tsukuba, 2.KEK)
Keywords:
manganese nitride,magnetization compensation,X-ray magnetic circular dichroism (XMCD)
Mn4−xZnxN epitaxial films were grown on SrTiO3(001) substrates by molecular beam epitaxy, and their structural and magnetic properties were investigated. STEM and EDX analyses confirmed the oriented growth of the Mn4−xZnxN film and the distribution of Mn and Zn. XAS and XMCD measurements at the Mn L2,3 absorption edges were performed at room temperature in zero magnetic field. The XMCD spectra showed sign reversal of the α and β peaks between x = 0.1 and x = 0.6. This behavior suggests that magnetization compensation occurs in Mn4−xZnxN thin films at room temperature, with the compensation composition located in the range of 0.1 < x < 0.6. The possible compensation behavior and preferential substitution site of Zn will be discussed based on structural, magnetic, and XANES analyses.