Presentation Information
[10p-PB3-33]Effect of the buffer layer on magnetic nanowire memory with a composition gradient
〇(B)Gensei Tanabe1, Takahiro Funae1, Hiroyuki Awano1, Kenji Tanabe1 (1.Toyota Tech. Inst.)
Keywords:
Magnetic nanowire memory,Perpendicular composition gradient,Current-induced domain wall motion
The effects of buffer layer materials (Pt, Ru) and the direction of composition gradients on the magnetic properties of perpendicularly composition-graded GdFe films (g-GdFe), which are promising for magnetic nanowire memory applications, were investigated. Magnetic characterization revealed a distinct difference in coercivity depending on the buffer layer, attributed to the enhancement of perpendicular magnetic anisotropy at the Pt/g-GdFe interface via strong spin-orbit coupling. Furthermore, an increase in the Kerr rotation angle was observed when the direction of the composition gradient was inverted. In the presentation, the effects of these graded films on current-induced domain wall motion characteristics after microfabrication into nanowires will also be reported.