[10p-S2-1~10] Next-Generation Electronics Enabled by Quantum Materials

3:50 PM - 4:20 PM JST(6:50 AM - 7:20 AM UTC)

[10p-S2-6] Twist-angle engineering and subband electronics in van der Waals junctions

〇Tomoki Machida¹, Kei Kinoshita¹, Yuta Seo¹, Rai Moriya¹ (1.IIS, Univ. of Tokyo)

Keywords:

2D materials

Continuous control of the twist angle is essential for fully exploiting the functionalities of van der Waals heterostructures. We developed an atomically thin probe by transferring a two-dimensional crystal onto an atomic force microscope (AFM) cantilever, enabling controlled contact, separation, and twist-angle modulation with another atomic layer on a substrate. Taking advantage of the flexibility of van der Waals assembly, we further realized van der Waals multiple-quantum-well structures. Few-layer transition metal dichalcogenides (TMDs) act as natural quantum wells owing to subband quantization, providing a promising platform for subband electronics.