[10p-S2-1~10] Next-Generation Electronics Enabled by Quantum Materials

4:20 PM - 4:50 PM JST(7:20 AM - 7:50 AM UTC)

[10p-S2-7] Development of Superconducting Integrated Devices Based on Atomic Layer Materials

〇Toshiaki Kato^1,2 (1.Grad. School of Eng. Tohoku Univ., 2.AIMR, Tohoku Univ.)

Keywords:

Graphene,Josephson junctions,Janus TMDs

Atomically thin materials, represented by graphene and transition metal dichalcogenides (TMDs), have emerged as promising platforms for next-generation quantum devices. We have developed superconducting integrated devices based on graphene Josephson junctions and recently discovered that the atomic-scale registry between graphene and the metastable A15 phase of MoRe may be the key to their superior junction performance. We will also present our latest advances in graphene-based Josephson parametric amplifiers and quantum devices utilizing Janus TMDs, highlighting recent progress in integrating superconductivity with atomically thin materials.