[10p-S5-1~14] 3.12 Semiconductor optical devices

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[10p-S5-7] Series Resistance Reduction by Using Tunnel Junction and n-type Substrate on Photovoltaic device

〇Takaya Oshimo¹, Kotona Tabata¹, Takeru Yamada¹, Hibiki Kai¹, Hiyou Miyagaki¹, Sho Aonuki², Yukiko Suzuki², Natsuha Ochiai², Madoka Takahashi², Koichi Akahane³, Hirosumi Yokoyama¹, Meita Asami¹, Masakazu Arai¹ (1.Miyazaki Univ., 2.NTT, 3.NICT)

Keywords:

InGaAsP,MOVPE

By converting an InGaAsP photovoltaic device on a p-substrate to a tunnel junction (TJ) + n-substrate structure, results suggesting the possibility of reducing series resistance were obtained. This is thought to be due to a reduction in the resistance of the substrate itself and a reduction in contact resistance. In addition, the element with the tunnel junction showed a slightly higher short-circuit current.