[11a-B11-1~11] 3.10 Photonic structures and phenomena

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[11a-B11-3] Pulsed 1000 nm-band photonic crystal laser

〇Kazumasa Kishimoto¹, Daisuke Tsunami¹, Eiji Nakai¹, Takahiro Ueno¹, Riku Morioka¹, Hiroya Maruyama¹, Yota Koyama¹, Yasuyuki Nakagawa¹, Takeshi Yamatoya¹, Yasunori Miyazaki¹ (1.Mitsubishi Electric Corp.)

Keywords:

photonic crystal,semicoductor laser

To extend the lasing wavelength of photonic crystal surface-emitting lasers (PCSELs) into the 1000 nm band, we fabricated a GaAs-based PCSEL employing an InGaAs active layer. A 500 μm-diameter cavity was selected as a size that enables a relatively easy trade-off between output power and beam quality, and the coupling coefficient was optimized for this cavity size by designing the geometry of a double-lattice photonic crystal. As a result, we achieved peak optical output powers of 36–49 W at lasing wavelengths of 1011–1026 nm, while maintaining a beam quality factor (M²) of 1.4 or less.