Presentation Information
[11a-B21-2]Atomic Layer Deposition for next generation semiconductor devices
〇Hyungjun Kim1 (1.School of Electrical and Electronic Engineering, Yonsei University)
Keywords:
Atomic Layer Deposition,High-k Dielectrics,,2D TMDCs
As semiconductor device scaling advances into the sub-3nm regime, Atomic Layer Deposition (ALD) has become indispensable for achieving atomic-scale thickness control and exceptional step coverage on complex 3D architectures. This paper presents recent breakthroughs by the Nanodevice Laboratory (NDL) at Yonsei University in ALD-grown functional thin films for next-generation logic and memory applications.For advanced logic, we demonstrate enhanced high-k gate insulators via Rare Earth (Y, Ce, Dy) doping of HfO2 which stabilizes higher-k phases and controls effective work functions. We also discuss the low-temperature synthesis of wafer-scale 2D Transition Metal Dichalcogenides for post-silicon channels, alongside fluorine-free Tungsten (W) metallization and sub-nanometer TaN/TiN diffusion barriers. Furthermore, we introduce integration solutions for next-generation memory, including area-selective ALD (AS-ALD) or charge trap separation in 3D V-NAND, and stoichiometry-controlled Chalcogenide OTS selectors (GeS) for 3D Cross-Point memory. These advancements effectively bridge fundamental atomic-scale material science with high-volume industrial manufacturing.