The 87th JSAP Autumn Meeting 2026
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Session Details

Symposium (Oral)Symposium : Atomic Layer Process (ALP) analysis and application technologies (4)

[11a-B21-1~7]Atomic Layer Process (ALP) analysis and application technologies (4)

Fri. Sep 11, 2026 9:00 AM - 11:30 AM JST
Fri. Sep 11, 2026 12:00 AM - 2:30 AM UTC
B21 (Faculty of Engineering B Block)
Chair : Takeshi Momose(Kumamoto Univ.), Kazuhiro Karahashi(Nagoya Univ.)
This symposium provides a comprehensive overview of atomic layer processes (ALP), including atomic layer deposition (ALD) and atomic layer etching (ALE), which are becoming increasingly important in advanced semiconductor device manufacturing, from both analytical and application perspectives.
The morning session will be conducted in English and will feature six presentations: three invited talks by international speakers on ALD and emerging materials for next-generation semiconductor devices, and three contributed talks on reaction analysis using approaches such as kinetic Monte Carlo (KMC) simulations and neural network potentials (NNPs).
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9:00 AM - 9:05 AM JST(12:00 AM - 12:05 AM UTC)

[11a-B21-1]Opening

〇Yukihiro Shimogaki1,2 (1.The Univ. Tokyo, 2.Hokkaido Univ.)
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9:05 AM - 9:35 AM JST(12:05 AM - 12:35 AM UTC)English Presentation

[11a-B21-2]Atomic Layer Deposition for next generation semiconductor devices

〇Hyungjun Kim1 (1.School of Electrical and Electronic Engineering, Yonsei University)
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9:35 AM - 10:05 AM JST(12:35 AM - 1:05 AM UTC)English Presentation

[11a-B21-3]Atomic Layer Engineering of Epitaxial Metal, Ferroelectric, and Antiferroelectric Materials for Advanced Devices

〇Miin-Jang Chen1, Yu-Sen Jiang1 (1.National Taiwan University)
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10:05 AM - 10:20 AM JST(1:05 AM - 1:20 AM UTC)English Presentation

[11a-B21-4]Kinetic Monte Carlo Study of Defect-Mediated Morphological Evolution during TMA/H2O Al2O3 Atomic Layer Deposition

〇(M2)Yichen ZOU1, Yuxuan Wu1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The Univ. of Tokyo)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)English Presentation

[11a-B21-5]Surface reaction analysis of thermal ALE of transition metal oxides with acetylacetonate ligands

〇(P)Lucas Fabian Spiske1, Satoshi Hamaguchi1 (1.Osaka University)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)English Presentation

[11a-B21-6]Adsorption state study of Cu diketonates on Cu surface with Neural Network Potential

〇Yuxuan Wu1, Yichen Zou1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.Univ. Tokyo)
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11:00 AM - 11:30 AM JST(2:00 AM - 2:30 AM UTC)English Presentation

[11a-B21-7]Transition metal carbide thin films prepared by atomic layer deposition: A new enabler for advanced metallization process

〇Soo-Hyun Kim1 (1.Ulsan National Institute of Science and Technology)
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