Session Details
[11a-B21-1~7]Atomic Layer Process (ALP) analysis and application technologies (4)
Fri. Sep 11, 2026 9:00 AM - 11:30 AM JST
Fri. Sep 11, 2026 12:00 AM - 2:30 AM UTC
Fri. Sep 11, 2026 12:00 AM - 2:30 AM UTC
B21 (Faculty of Engineering B Block)
[11a-B21-1]Opening
〇Yukihiro Shimogaki1,2 (1.The Univ. Tokyo, 2.Hokkaido Univ.)
[11a-B21-2]Atomic Layer Deposition for next generation semiconductor devices
〇Hyungjun Kim1 (1.School of Electrical and Electronic Engineering, Yonsei University)
[11a-B21-3]Atomic Layer Engineering of Epitaxial Metal, Ferroelectric, and Antiferroelectric Materials for Advanced Devices
〇Miin-Jang Chen1, Yu-Sen Jiang1 (1.National Taiwan University)
[11a-B21-4]Kinetic Monte Carlo Study of Defect-Mediated Morphological Evolution during TMA/H2O Al2O3 Atomic Layer Deposition
〇(M2)Yichen ZOU1, Yuxuan Wu1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The Univ. of Tokyo)
[11a-B21-5]Surface reaction analysis of thermal ALE of transition metal oxides with acetylacetonate ligands
〇(P)Lucas Fabian Spiske1, Satoshi Hamaguchi1 (1.Osaka University)
[11a-B21-6]Adsorption state study of Cu diketonates on Cu surface with Neural Network Potential
〇Yuxuan Wu1, Yichen Zou1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.Univ. Tokyo)
[11a-B21-7]Transition metal carbide thin films prepared by atomic layer deposition: A new enabler for advanced metallization process
〇Soo-Hyun Kim1 (1.Ulsan National Institute of Science and Technology)