[11a-B32-1~11] 6.4 Thin films and New materials

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-B32-9] Giant nonlinear response in Cr₃Te₄ films exhibiting zero-field topological Hall effect

〇Daisuke Yamazaki¹, Yuki Itahashi², Kanta Endo³, Takashi Shitaokoshi², Yoshihiro Iwasa², Masaki Nakano¹ (1.SIT, 2.RIKEN CEMS, 3.Univ. of Tokyo)

Keywords:

Van der waals magnets,Nonlinear transport properties,Topological hall effect

The promising magnetic material Cr_1+δTe₂ has garnered significant attention in the field of spintronics. It not only exhibits robust perpendicular magnetic anisotropy (Ising ferromagnetism), which is essential for next-generation high-density magnetic memory, but also uniquely manifests the topological Hall effect at room temperature under zero magnetic field. Building upon these properties, our study focuses on the nonlinear transport phenomena of a related compound, Cr₃Te₄. By utilizing AC electrical resistance measurements, we successfully observed a distinct higher-order harmonic resistance component. This behavior clearly differs from conventional linear resistance, indicating the presence of complex underlying spin dynamics. In this presentation, we will discuss the intricate relationship between these nonlinear conduction properties and the material's specific magnetic structure, offering new insights toward realizing highly efficient electronic and magnetic memory devices.