Session Details
[11a-B32-1~11]6.4 Thin films and New materials
Fri. Sep 11, 2026 9:00 AM - 12:00 PM JST
Fri. Sep 11, 2026 12:00 AM - 3:00 AM UTC
Fri. Sep 11, 2026 12:00 AM - 3:00 AM UTC
B32 (Faculty of Engineering B Block)
[11a-B32-1]Enhancement of Hole Density in CuI via Sn(II) Doping
〇Kentaro Asai1, Hidenobu Murata2, Tomokazu Nagao3, Takashi Inomata4, Naoomi Yamada1 (1.Chubu Univ., 2.JFCC, 3.NBC Meshtec Inc., 4.Kisan KInzoku Chemicals Co., Ltd)
[11a-B32-2]CuI1-xBrx composition gradient films for a hole-transport layer in perovskite solar cells
〇Teruya Iwase1, Hidenobu Murata2, Tomokazu Nagao3, Takashi Inomata4, Naoomi Yamada1 (1.Chubu Univ., 2.JFCC, 3.NBC Meshtec Inc., 4.Kisan Kinzoku Chemicals Co., Ltd)
[11a-B32-3]Origin of p-Type Carriers in CuBiI4 Thin Films with Varied Cu/Bi Ratios
〇Mirei Takahashi1, Koki Ogawa1, Hidenobu Murata2, Tomohito Sudare3, Naoomi Yamada1 (1.Chubu Univ., 2.JFCC, 3.Univ. Tokyo)
[11a-B32-4]Effects of Solvents on Mist Chemical Vapor Growth of MA3Bi2I9 Oriented Thin Films
〇(M2)Yuki Inoue1, Daichi Oka1, Ibuki Syoda1, Yasushi Hirose1 (1.Tokyo Metropolitan Univ.)
[11a-B32-5]Fabrication and Characterization of Short-Wavelength Infrared Photodiodes Using a Layered Oxychalcogenide Semiconductor Thin Film
〇Sakura Yoshikawa1, Hiroto Arima1, Kenta Koyama2, Shuichi Kimura2, Masashi Kurosawa3, Shigenori Ueda4, Toshio Kamiya1, Takayoshi Katase1 (1.Science Tokyo, 2.artience, 3.Nagoya Univ., 4.NIMS)
[11a-B32-6]Epitaxial β-In2S3 thin films grown via vertical chemical vapor deposition
〇Yuuta Tanaka1, Yanase Takashi1 (1.Toho Univ.)
[11a-B32-7]Hysteretic behavior of current-voltage characteristics in AgCrSe2 thin-film devices
〇Haruto Sato1, Kouta Mihara1, Kenshin Inamura1, Junichi Shiogai1,2, Tkamasa Hirai3, Kenichi Uchida3,4, Kazutaka Kudo1,2, Jobu Matsuno1,2 (1.Dept. Phys., Univ. Osaka, 2.OTRI-Spin, Univ. Osaka, 3.NIMS, 4.GSFS, Univ. Tokyo)
[11a-B32-8]Intercalant-ordering-induced valence-band reconstruction in van der Waals ferromagnet Cr3Te4
〇MASAKI KOBAYASHI1, Kanta Endo2, Kosuke Takiguchi1, Tom Ichiba3, Kenta Hongo3, Yoshitaka Taniyasu1, Masaki Nakano4 (1.BRL, NTT, Inc., 2.Univ. of Tokyo, 3.JAIST, 4.Shibaura Inst. Tech.)
[11a-B32-9]Giant nonlinear response in Cr3Te4 films exhibiting zero-field topological Hall effect
〇Daisuke Yamazaki1, Yuki Itahashi2, Kanta Endo3, Takashi Shitaokoshi2, Yoshihiro Iwasa2, Masaki Nakano1 (1.SIT, 2.RIKEN CEMS, 3.Univ. of Tokyo)
[11a-B32-10]Investigation of the effect of electrolyte on Cr3Te4-based ion-gate devices
〇(B)Haruma Naruse1, Yuki Misumi1, Kanta Endo2, Bowen Qiang1, Masaki Nakano1 (1.Shibaura Inst., 2.Tokyo Univ.)
[11a-B32-11]Application of PCL-assisted dry transfer to MBE-grown vdW thin films and evaluation of their physical properties
〇Kanta Endo1, Meguru Matsuo2, Taiju Kawakami2, Yuki Itahashi3, Yoshihiro Iwasa3, Masaki Nakano2 (1.Dept. of Appl. Phys. the Univ. of Tokyo, 2.Coll. of Eng., Shibaura Inst. of Technol., 3.RIKEN CEMS)
