[11a-C309-1~14] 15.5 Group IV crystals and alloys

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[11a-C309-12] Fabrication of a strained SiGe spintronic structure on Ge-on-insulator

〇Kenji Oki¹, Shuya Kikuoka², Shimon Watahiki¹, Sora Obinata^1,3,4, Keisuke Yamamoto⁵, Michihiro Yamada², Kentarou Sawano², Kohei Hamaya^1,3,4 (1.GSES, The Univ. of Osaka., 2.Adv. Res. Lab., Tokyo City Univ., 3.CSRN, The Univ. of Osaka., 4.OTRI-Spin, The Univ. of Osaka., 5.REISI, Kumamoto Univ.)

Keywords:

Ge-on-Insulator,SiGe,Spintronics