The 87th JSAP Autumn Meeting 2026
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Oral presentation15 Crystal Engineering : 15.5 Group IV crystals and alloys

[11a-C309-1~14]15.5 Group IV crystals and alloys

Fri. Sep 11, 2026 9:00 AM - 12:45 PM JST
Fri. Sep 11, 2026 12:00 AM - 3:45 AM UTC
C309 (Faculty of Engineering C Block)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[11a-C309-1]Evaluation of Charging Characteristics in Epitaxially Grown Si/SiGe Nanodot/Si Structures

〇(D)Jongeun Baek1, Yuki Imai1, Yuji Yamamoto2,1, Katsunori Makihara1,2 (1.Nagoya Univ., 2.IHP-Leibniz Institut for innovative Mikroelektronik)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[11a-C309-2]Effects of Stacking Arrangement on the Strain and Optical Properties of Multilayered SiGe Nanodots Embedded in Si Spacers

〇Yuta Ito1,2, Wei-Chen Wen3, Yuji Yamamoto3, Hiromu Kudo1, Atsushi Ogura1,4 (1.Meiji Univ., 2.JSPS Research Fellow, 3.IHP, 4.MREL)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[11a-C309-3]Evaluation of Strain Distribution in Si1-xGex/Si1-yGey (100) Heteroepitaxial Thin Films by Raman Mapping Measurement

〇Hiromu Kudo1, Yuta Ito1,2, Yuji Yamamoto3, Naomi Sawamoto4, Atsushi Ogura1,4 (1.Meiji Univ., 2.JSPS Research Fellow, 3.IHP, 4.MREL)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[11a-C309-4]MBE Growth of SiGe/Si Multilayers on Si(110) Substrates and Evaluation of Critical Thickness

〇Keitaro Kato1, Tomohiro Hagiwara1, Kentarou Sawano1, Michihiro Yamada1, Yuichiro Mitani1 (1.Tokyo City Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[11a-C309-5]nvestigation of evaluation method for critical thickness of (Si/SiGe)x3/Si(110) superlattice for NS

〇Koji Usuda1, Kiu Inami2,3, Naoto Kumagai3,4, Toshifumi Irisawa3,4, Atsushi Ogura1,2 (1.Meiji Univ., MREL, 2.Meiji Univ., 3.AIST, 4.LSTC)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-C309-6]Off-Cut Dependence of Facet Structures Formed on SiGe Layers Grown on Si(110) Substrates

〇Kiu Inami1,2, Koji Usuda3, Naoto Kumagai1,4, Toshifumi Irisawa1,4, Atsushi Ogura2,3 (1.SFRC, AIST, 2.Meiji Univ., 3.MREL, 4.LSTC)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-C309-7]Effects of B2O3 interfacial layer insertion on the in-plane uniformity of composition-graded SiGe layer grown on Si substrates via melting and solidification of Al–Ge alloys

〇Aoi Higaki1, Ryoji Katsube1, Hideaki Miyamiyama2, Marwan Dhamrin2,3, Noritaka Usami1,4,5 (1.Grad, Eng. Nagoya Univ., 2.Toyo Aluminium K.K., 3.Osaka Univ., 4.IMaSS Nagoya Univ., 5.InFuS Nagoya Univ.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-C309-8]Investigation of minority carrier lifetime enhancement in SiGe layers fabricated by screen-printing of Al–Ge paste and subsequent annealing through thermal oxidation treatment

〇Kenta YAgi1, Ryoji Katsube1, Shota Suzuki2, Hideaki Minamiyama2, Marwan Dhamrin2,3, Yasuyoshi Kurokawa1,4, Noritaka Usami1,5,6 (1.Nagoya Univ., 2.Toyo Aluminium K.K., 3.Osaka Univ., 4.Kansai Univ., 5.InFuS, Nagoya Univ., 6.IMaSS, Nagoya Univ.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-C309-9]Investigation of dislocation identification methods in composition-graded SiGe films based on near-infrared polarized transmission microscopy and transmission electron microscopy observations

〇(M2)Manami Iwata1, Ryoji Katsube1, Shota Suzuki2, Hideaki Minamiyama2, Marwan Dhamrin2,3, Noritaka Usami1,4,5 (1.Nagoya Univ., 2.Toyo Aluminium K.K., 3.Osaka Univ., 4.InFuS Nagoya Univ., 5.IMaSS Nagoya Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[11a-C309-10]Study on atomic arrangement of bulk SiGe observed by X-ray diffraction at low-temperature with synchrotron radiation

〇Ryo Yokogawa1,2,3, Akitoshi Nakano4, Yasutomo Arai5, Ichiro Yonenaga6, Taishun Manjo7, Satoshi Tsutsui7, Yuiga Nakamura7, Atsushi Ogura3,8 (1.RISE, Hiroshima Univ., 2.Grad. Sch. of Eng., Hiroshima Univ., 3.MREL, 4.Grad. Sch. of Eng., Nagoya Univ., 5.JAXA, 6.Tohoku Univ., 7.JASRI, 8.Meiji Univ.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[11a-C309-11]Theoretical study of dependence of bandgaps of SiSn, GeSn, and SiGe on atomic configurations

〇Kouji Sueoka1, Hibiki Bekku2, Yuji Hamamoto1, Yusuke Noda3,4 (1.Department of Communication Engineering, Okayama Prefectural University, 2.Graduate School of Computer Science and Systems Engineering, Okayama Prefectural University, 3.Department of Electronics and Information Communications, Kyushu Institute of Technology, 4.Data Science and AI Research Center, Kyushu Institute of Technology)
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[11a-C309-12]Fabrication of a strained SiGe spintronic structure on Ge-on-insulator

〇Kenji Oki1, Shuya Kikuoka2, Shimon Watahiki1, Sora Obinata1,3,4, Keisuke Yamamoto5, Michihiro Yamada2, Kentarou Sawano2, Kohei Hamaya1,3,4 (1.GSES, The Univ. of Osaka., 2.Adv. Res. Lab., Tokyo City Univ., 3.CSRN, The Univ. of Osaka., 4.OTRI-Spin, The Univ. of Osaka., 5.REISI, Kumamoto Univ.)
12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[11a-C309-13]Control of carrier concentration in a strained SiGe spin transport layer
using ion implantation

〇Sota Inoue1, Kenji Oki1, Sora Obinata1,2,3, Keitaro Kato4, Shuya Kikuoka4, Takahiro Inoue5, Michihiro Yamada4, Kentarou Sawano4, Keisuke Yamamoto6, Kohei Hamaya1,2,3 (1.GSES, The Univ. of Osaka., 2.CSRN, The Univ. of Osaka., 3.OTRI-Spin, The Univ. of Osaka., 4.Adv. Res. Lab., Tokyo City Univ., 5.IRCNST, Tokyo City Univ., 6.REISI, Kumamoto Univ.)
12:30 PM - 12:45 PM JST(3:30 AM - 3:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-C309-14]Spin injection into a buried SiGe channel via a Ge spacer layer

〇Sora Obinata1,2,3, Shunsuke Tanaka1, Kenji Oki1, Shuya Kikuoka4, Kentarou Sawano4, Kohei Hamaya1,2,3 (1.GSES, The Univ. of Osaka, 2.CSRN, The Univ. of Osaka, 3.OTRI, The Univ. of Osaka, 4.Tokyo City Univ.)
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