[11a-E203-1~10] 1.6 Ultrasonics

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-E203-7] Epitaxial Growth of Si, Ge, or Sc Doped AlN Films Using Single-Crystal Ti Electrodes / Multi-unctional® Interlayers and Their BAW Characterization

〇(M1)Hideaki Gommori¹, Masashi Suzuki¹, Shoji Kakio¹, Masashi Seki², Takeshi Kijima² (1.Univ. of Yamanashi, 2.Gaianixx Inc.)

Keywords:

AlN film,epitaxial growth,bulk acoustic wave