[11a-E207-1~7] CS.1 Code-sharing session of 2.3&7.4

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-E207-2] Optimum conditions of low-temperature GCIB etching in reactive gas environments

〇Seiya Kitanaka¹, Noriaki Toyoda¹ (1.Univ. of Hyogo)

Keywords:

Gas cluster ion beam,etching

To achieve high-precision processing of high-aspect-ratio structures in semiconductor manufacturing processes, we investigate the optimization of reactive etching using a gas cluster ion beam (GCIB) at cryogenic temperatures. In this presentation, we focus on the flux ratio, which is derived from the incident amount of SF₆ gas adsorbed onto the substrate and the GCIB irradiation dose. We report on the optimal parameter conditions to maximize etching characteristics under cryogenic environments.