[11a-E207-1~7] CS.1 Code-sharing session of 2.3&7.4

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[11a-E207-3] Characteristics of DLC Films formed by Ar-GCIB assisted deposition at low-temperature

〇(M1)Takeru Yamamoto¹, Noriaki Toyoda¹ (1.Univ of Hyogo)

Keywords:

GCIB,DLC

In this study, we investigated the low-temperature deposition characteristics of DLC films using C₆₀ Ar-GCIB assisted deposition. The substrate temperature was varied from room temperature to -15°C to form a DLC film on a Si substrate, and evaluation was performed using Raman spectroscopy and X-ray reflectance measurements. As the C₆₀/Ar ratio decreased, i.e., the fraction of Ar-GCIB increased, film density increased. The highest film density was achieved at a C₆₀/Ar ratio of 16. It is shown that substrate cooling is effective for high-density DLC film formations.