[11a-E215-1~7] CS.10 Code-sharing session of 6.5&7.5

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[11a-E215-1] Experimental and Numerical Evaluation of the Detection Depth of XAS-PEEM for Solid–Liquid Interface Analysis

〇Masaya Takeuchi¹, Takuo Ohkochi², Satoru Suzuki² (1.ORIST, 2.LASTI, Univ. of Hyogo)

Keywords:

PEEM,Solid liquid interface analysis,Silicon nitride

For application to solid–liquid interface analysis, we experimentally and numerically evaluated the detection depth of electron signals in XAS-PEEM. A Cr/SiNx sample was irradiated with 576 eV X-rays, and the sample-voltage dependence of the electron signal was measured. The results showed that the electron intensity decreased significantly at sample voltages of 5 V or lower. This suggests that the signal contributing to PEEM image acquisition is dominated not by the several-hundred-eV Auger electrons generated after X-ray absorption themselves, but by low-energy secondary electrons of several eV or less produced during their transport process.