[11a-E215-1~7] CS.10 Code-sharing session of 6.5&7.5

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[11a-E215-4] Nitric Oxide Adsorption near Metastable Sites on Hafnium-Adsorbed Si(111) Surfaces under Ultrahigh Vacuum

〇Takuhiro Kakiuchi¹, Hina Takashiro¹, Yoshino Oura¹, Yasutaka Tsuda², Akitaka Yoshigoe² (1.Ehime Univ., 2.JAEA)

Keywords:

Hafnium oxynitride,X-ray photoelectron spectroscopy,Supersonic molecular beam

We attempted to form a sharp and chemically stable oxynitride interface between HfO₂ and a Si semiconductor substrate through the reaction of a NO molecular beam with a Hf-adsorbed Si(111) surface. By varying the initial amount of adsorbed Hf, a significant difference in the thickness of the interfacial oxynitride layer was observed. This is because, at Hf coverages below one monolayer, NO adsorption occurs only near metastable Hf adsorption sites.