Presentation Information
[11a-N302-2]Growth of Strain-Induced KTaO3 Epitaxial Thin Films by Hydrothermal Method and Their Characterization
〇Kyota Norizuki1, Hu Yuxian1, Miki Nakahata1, Sotaro Kageyama1, Satsuki Koga1, Yoshitaka Ehara2, Tatsuya Masuda3, Hiroki Moriwake3, Kazuki Okamoto1, Hiroshi Funakubo1 (1.Science Tokyo, 2.NDA, 3.JFCC)
Keywords:
Ferroelectric,Thin film,Crystal
KTaO3, known as a quantum paraelectric, has been theoretically predicted to exhibit strain-induced ferroelectricity at room temperature. However, conventional vapor-phase deposition techniques face difficulties in producing high-quality thin films because of the volatility of potassium, and experimental reports on the induction of ferroelectricity through strain engineering remain limited. In this study, we fabricated epitaxial KTaO3 thin films by hydrothermal synthesis, a low-temperature process, and attempted to introduce strain into the films. Here, we report the characterization results of the obtained films.