Presentation Information

[11a-N302-9]Electric Properties of Ferroelectric Ce-Mn Co-Substituted ZnO (ZCM) Epitaxial Thin Films on Si Substrates

〇(M2)HIROYA OISO1, Sota Inoue1, Yu Ukezeki1, Shunpei Kawano2, Nobuyuki Ohtsuka2, Kazuki Okamoto2, Hiroshi Funakubo2, Takeshi Yoshimura1,3 (1.Osaka Metro. Univ., 2.Science Tokyo, 3.Toyohashi Univ. Tech.)

Keywords:

Ferroelectric,Wurtzite,ZnO

Ferroelectricity in wurtzite-structured materials has been discovered in a variety of systems since the report by Fichtner et al. in 2019. In ZnO, ferroelectricity has been reported to emerge through Mg substitution and Ce-Mn co-substitution, and in recent years its switching behavior has been actively studied. We have fabricated ZCM epitaxial thin films on Si substrates and reported a low coercive field of about 1.5 MV/cm. In this presentation, we carried out a detailed analysis of the switching characteristics and related properties of this material.