[11a-N304-1~11] 17.2 Fundamental properties

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[11a-N304-3] Resist-Contact-Free Device Fabrication Using an α-Sb₂O₃ Sacrificial Layer

〇Kaito Kanahashi¹, Tomonori Nishimura¹, Keiji Ueno², Kosuke Nagashio¹ (1.U. Tokyo, 2.Saitama Univ.)

Keywords:

two-dimensional material,Sb2O3