Presentation Information
[11a-N304-7]Control of Ising-Rashba Spin-Orbit Coupling in Multilayer TMDCs
〇(DC)Tomoaki Kameda1,2, Souren Adhikary2, Katsunori Wakabayashi2,1 (1.Kwansei Gakuin Univ., 2.NIMS)
Keywords:
Transition metal dichalcogenides,spin-orbit coupling
Group-VI transition metal dichalcogenides (TMDCs) are two-dimensional semiconductors with strong spin-orbit coupling and valley degrees of freedom, and are promising platforms for spintronics and valleytronics. In monolayer TMDCs, the K and K′ valleys host Ising-type SOC with out-of-plane spin polarization, whereas Janus TMDCs can exhibit Rashba-type SOC near Γ due to broken mirror symmetry. Here, we study multilayer TMDC-based materials, where interlayer coupling and stacking geometry tune the relative energies of the K and Γ valence-band edges. When these valleys are separated by an energy comparable to kBT at room temperature, both can contribute to Fermi-level properties through thermal excitation or chemical-potential control. By analyzing K–Γ band-edge proximity and spin textures, we examine how stacking and gating modulate the relative contributions of Ising- and Rashba-type spin-orbit states, establishing design principles for valley- and spin-orbit-coupled response control.