Presentation Information
[11a-PB1-22]Mechanism of Oxide/GaN Interface Oxidation in Mist-CVD at High Temperature
〇Thin Nu Soe1, Ryosuke Hamasuna1, Takumi Hirakura1, Yusui Nakamura1, Zenji Yatabe2 (1.Kumamoto Univ., 2.Hokkaido Univ.)
Keywords:
MOS interface,surface oxidation,mist-CVD
In recent years, mist-CVD has attracted considerable attention as a deposition technique for oxide insulators in GaN-based devices. Unintentional oxidation can occur at the oxide/GaN interface during the oxide insulator deposition, degrading device performance. In this study, we conduct oxidation on Si surface under a mist [deionized (DI) water] atmosphere to understand the oxidation mechanism at oxide/semiconductor interface and investigate the contribution of water molecules in supply mist to interfacial oxidation. The kinetics of mist-oxidation were analyzed with the well-published Deal-Grove oxidation model. The activation energy of parabolic rate constant of mist-oxidation on Si surface is comparable to that of wet oxidation, suggesting that water molecules from mist supply can diffuse to the SiO2/Si interface to perform interfacial oxidation.