[11a-PB1-1~31] 13.7 Compound and power devices, process technology and characterization | The 87th JSAP Autumn Meeting 2026

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Poster presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[11a-PB1-1~31]13.7 Compound and power devices, process technology and characterization

Fri. Sep 11, 2026 9:00 AM - 10:30 AM JST
Fri. Sep 11, 2026 12:00 AM - 1:30 AM UTC

PB1 (2nd Gymnasium)

[11a-PB1-1]Electrical Conductivity Characteristics of AlGaN/GaN Heterostructures Having Thin AlGaN Layer

〇Takuma Mori¹, Takumi Iwanami¹, Hiroshi Okada¹ (1.Toyohashi Univ. Technol.)

[11a-PB1-2]Elucidation of Trap Mechanisms in Ni/SiO₂/AlN/GaN Structures using Angle-Resolved Hard X-ray Photoelectron Spectroscopy

〇Shunsuke Yamaguchi¹, Kakeru Uetani¹, Mariko Shimizu², Kento Minamikawa², Tatsuo Shimizu², Yosuke Kajiwara², Yuichiro Mitani¹, Hiroshi Nohira¹ (1.Tokyo City univ., 2.Toshiba Corp. Corporate Laboratory)

[11a-PB1-3]The Effect of Mg Concentration on the Photon-Enhanced Thermionic Emission Characteristics of Mg-doped InGaN

〇Kaisei Suzuki¹, Shigeya Kimura², Hisao Miyazaki², Akihisa Ogino¹ (1.Shizuoka Univ., 2.Corporate Laboratory, Toshiba Corp.)

[11a-PB1-4]Characterization of ALD Al₂O₃/AlN interface

〇Yidi Wei¹, Masanobu Hiroki², Kazuyuki Hirama², Yoshitaka Taniyasu², Kazuhide Kumakura¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ, 2.NTT-BRL)

[11a-PB1-5]Transient simulation of GaN-MOS CV with deep trap

〇Katsunori Ueno¹, Yuto Hoshino¹, Ryo Tanaka¹, Shinya Takashima¹ (1.Fuji Electric)

[11a-PB1-6]MOS analysis on effects of two-step annealing on Mg-ion-implanted HVPE GaN

〇Hinata Karasawa¹, Masamichi Akazawa¹, Shota Kaneki², Hajime Fuzikura² (1.RCIQE, Hokkaido Univ., 2.Sumitomo chemical)

[11a-PB1-7]Characterization of ALD SiO₂/GaN interface

〇Jiaoyang Chen¹, Masanobu Takahashi¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

[11a-PB1-8]GaN-based MIS-HEMTs Employing MOCVD-Deposited SiAlN Dielectrics for High-Power and High-Efficiency X-band Power Amplifiers

〇Yuichi Minoura¹, Atsushi Yamada¹, Toshihiro Ohki¹ (1.Fujitsu Ltd.)

[11a-PB1-9]Performance Enhancement of AlGaN/GaN HEMT via Recessed Gate Structure

〇Masaya Takimoto¹, Tasuku Sumino¹, Tsutomu Matsuura¹, Koji Yoshitsugu¹, Kazuyuki Onoe¹, Takehiro Nishida¹ (1.Mitsubishi Electric Corp.)

[11a-PB1-10]Method of ringing noise reduction for GaN-HEMT switching circuits (II)

〇Toshihide Ide¹, Ryosaku Kaji¹, Katsumi Furuya¹ (1.AIST)

[11a-PB1-11]Non-polar GaN/AlN Resonant Tunneling Diode Fabricated on
m-Plane GaN Substrate by MOCVD

〇hikaru imaizumi¹, shuto kamiya¹, akira mase¹, keitaro yamaguchi¹, takashi egawa¹, makoto miyoshi¹ (1.Nagoya Institute of Tech)

[11a-PB1-12]Device fabrication and characterization of AlN/AlGaN Multi-channel HFETs Fabricated on a Single-Crystal AlN Substrate by MOCVD

〇(M2)Shotaro Sato¹, Shuto Kamiya¹, Keitaro Yamaguchi¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst)

[11a-PB1-13]Evaluation of nonvolatile memory characteristics of GaN/AlN resonant tunneling diodes with AlGaN interlayers

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

[11a-PB1-14]Reduced Contact Resistance in N-Polar GaN using Recess Structures

〇Jun Taniguchi¹, Atsushi Yamada¹, Yuichi Minoura¹, Tomoharu Sugino¹, Atsushi Tanaka², Manabu Arai², Jun Suda², Yoshio Honda², Toshihiro Ohki¹, Norikazu Nakamura¹, Hiroshi Amano² (1.Fujitsu Ltd., 2.IMaSS Nagoya Univ.)

[11a-PB1-15]Characterization of Inversion-Mode n-Channel GaN MOSFETs Fabricated Using a Low-Damage Interface Formation Process

〇Hiroto Akabane¹, Masanobu Takahashi¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

[11a-PB1-16]X-ray diffraction analysis of highly Ge-doped GaN deposited by reactive sputtering

〇Kenji Ito¹, Kazuyoshi Tomita¹, Tetsu Kachi¹ (1.IMaSS, Nagoya Univ.)

[11a-PB1-17]Investigation of High-Selectivity MgO Etching Mask for GaN Deep-Trench Fabrication

Hiroshi Ohta¹, Tomoaki Nishimura¹, Tomoyoshi Mishima¹, Hirotaka Oosato², Masaaki Onomura², Daiju Tsuya², 〇FUMIMASA HORIKIRI¹ (1.Hosei Univ., 2.NIMS)

[11a-PB1-18]Charge-pumping (CP) and time-domain CP characterizations on MOS interface states in 4-terminals-type GaN MOSFETs (1)

Yoshiki Yokoyama¹, Tetsu Kachi², Ruofei Geng¹, Keigo Adachi¹, Bunta Shimabukuro¹, Jun Suda², 〇Takahide Umeda¹ (1.Univ. of Tsukuba, 2.Nagoya Univ.)

[11a-PB1-19]Charge-pumping (CP) and time-domain CP characterizations on MOS interface states in 4-terminals-type GaN MOSFETs (2)

Yoshiki Yokoyama¹, 〇Takahide Umeda¹, Tetsu Kachi², Jun Suda², Masahiro Hori³, Yukinori Ono³ (1.Univ. of Tsukuba, 2.Nagoya Univ., 3.Shizuoka Univ.)

[11a-PB1-20]Contactless-photoelectrochemical (CL-PEC) Etching of
AlGaN/GaN Heterostructures and its self-stopping phenomenon

〇Haruki Okano¹, Tokachi Katsumata¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

[11a-PB1-21]Electrical properties of recessed MIS gate AlGaN/GaN heterostructure transistors processed by contactless-photoelectrochemical (CL-PEC) etching

〇Tokachi Katsumata¹, Hiroki Okano¹, Taishin Kawata¹, Zenji Yatabe¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

English Presentation

[11a-PB1-22]Mechanism of Oxide/GaN Interface Oxidation in Mist-CVD at High Temperature

〇Thin Nu Soe¹, Ryosuke Hamasuna¹, Takumi Hirakura¹, Yusui Nakamura¹, Zenji Yatabe² (1.Kumamoto Univ., 2.Hokkaido Univ.)

[11a-PB1-23]Analysis of power device performance of Ga pnictides and Ga chalcogenides based on first-principles calculations

〇(M1C)Yuki Takei¹, Noda Yusuke^1,2 (1.Kyushu Inst. Technol., 2.DS&AI Res. Cent., Kyushu Inst. Technol.)

[11a-PB1-24]Physical Origin and Suppression Condition of Geometric Components in Charge Pumping of 4H-SiC nMOSFETs

〇Shuto Oi¹, Tetsuo Hatakeyama¹, Mitsuru Sometani², Hirohisa Hirai², Mitsuo Okamoto² (1.Toyama Pref. Univ., 2.AIST)

[11a-PB1-25]Influence of cooling process on the fixed charges at SiC/SiO₂ interface

〇Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

[11a-PB1-26]Evaluation of Thermal Breakdown Characteristics of InP-based Resonant Tunneling Diodes on SiC Substrate

〇Shiori Matsuda¹, Tang Zhenling¹, Hiroki Tanaka¹, Safumi Suzuki¹ (1.Science Tokyo)

[11a-PB1-27]Electrically-detected-magnetic-resonance (EDMR) observation on conduction-band-side 4H-SiC(0001)/SiO₂ interface states reacted with NO post-oxidation anneal

〇Keigo Adachi¹, Bunta Shimabukuro¹, Mitsuru Sometani², Hirohisa Hirai², Heiji Watanabe³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.UOsaka)

[11a-PB1-28]Impact of Conditioning Time on Vth Measurement in Gate Oxide Degradation Test of SiC MOSFET

〇Kota Kusano¹, Hajime Takayama¹, Kazutoshi Kobayashi¹, Michihiro Shintani¹ (1.Kyoto Inst. of Tech.)

[11a-PB1-29]Surface Planarization and Surface Evaluation of SiC Wafers Using Near-Field Etching

〇Reo Yoshimatsu¹, Kyohei Yoshida², Shoji Nagaoka^2,3, Makoto Takafuji¹ (1.Faculty of Advanced Science and Technology, Kumamoto Univ., 2.Kumamoto Industrial Research Inst., 3.Kumamoto Innovative Development Organization, Kumamoto Univ.)

[11a-PB1-30]Chemical State Analysis of Doped ions in Ion-Implanted Diamond

〇Ayumu Kubo¹, Takaomi Matsutani¹, Daisuke Matsuo², Honoka Watanabe², Shun Konno², Mami Fujii³ (1.Graduate School, Kindai University, 2.Nissin Ion Equipment Co., Ltd., 3.Ritsumeikan University)