Presentation Information
[11a-PB3-7]Investigation of YxAlN1-xThin-Film Growth by Segmented-Target Pulse Laser Deposition
〇(M2)Ryosuke Takagi1, Iwasaki Kouji1, Nakashima Seiji1, Hotta Yasushi1, Fujitani Kaito1 (1.Hyogo Univ.)
Keywords:
Aluminum nitride,Yttrium,Pulsed Laser Deposition
Wurtzite-structured AlN is highly expected to exhibit significantly enhanced piezoelectric performance through trivalent Y-doping. However, the improvement of its piezoelectricity is limited by oxidation and the resulting degradation of crystallinity. To address this issue, we attempted film deposition using the pulsed laser deposition (PLD) method, which enables non-thermal equilibrium deposition under an ultra-high vacuum . Furthermore, to more effectively prevent oxygen contamination, this study utilized a segmented target to simultaneously ablate high-purity AlN and Y bulk materials. Here, we report on the crystal structure and piezoelectric properties of the YAlN thin films fabricated using this approach.