[11a-S1-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[11a-S1-4] A new 3T gain cell and its application to pseudo-SRAM

〇Yusaku Shiotsu¹, Sei Yoshida¹, Chikahide Ichikawa¹, Satoshi Sugahara¹ (1.FIRST, Inst. of Sci. Tokyo)

Keywords:

Gain cell,Pseudo-SRAM