[11p-A21-1~12] 13.7 Compound and power devices, process technology and characterization

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[11p-A21-11] X-Band (10 GHz) Large-Signal Characteristics of Diamond FET

Niloy Chandra Saha¹, Masanori Eguchi², Atsushi Tomiki³, 〇Makoto Kasu^1,4 (1.Diamond Semiconductor Research Center, Saga Univ., 2.Synchrotron Research Center, Saga Univ., 3.JAXA Institute of Space and Astronautical Science, 4.Diamond Semiconductor Co., Ltd.)

Keywords:

diamond,RF power device

We fabricate and measure large-signal characteristics of diamond FETs at 10 GHz, X-band.