[11p-A21-1~12] 13.7 Compound and power devices, process technology and characterization | The 87th JSAP Autumn Meeting 2026

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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[11p-A21-1~12]13.7 Compound and power devices, process technology and characterization

Fri. Sep 11, 2026 2:00 PM - 5:00 PM JST
Fri. Sep 11, 2026 5:00 AM - 8:00 AM UTC

A21 (Faculty of Info. Sci. & Tech. Bldg.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[11p-A21-1]Electrical Characteristics of NiO/α-Ga2O3 Hetero Junction Diodes

〇Hibiki Kuriyama¹, Okumura Hironori¹ (1.Tsukuba Univ.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A21-2]Ga₂O₃ MOS Capacitors with Si-Implanted AlO_x Insulators (2)

〇Keita Shoji¹, Daisuke Matsuo², Shun Konno², Kosuke Usui², Kohei Tanaka², Masataka Higashiwaki¹ (1.Osaka Metropolitan Univ., 2.Nissin Ion Equipment)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A21-3]Deterioration of β-Ga₂O₃ MOS Interface Characteristics by TMAH Surface-Smoothing Etching and Its Suppression by Lowering Etching Temperature and O₃ Oxidation

〇Hayama Imaida¹, Atsushi Tamura¹, Koji Kita¹ (1.GSFS, The Univ. of Tokyo)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[11p-A21-4]Ti/Pt/Au ohmic electrodes for β-Ga₂O₃ semiconductor

〇Takayoshi Oshima¹, Yuichi Oshima¹ (1.NIMS)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A21-5]Fabrication and Electrical Characteristics of Self-Aligned Gate β-Ga₂O₃ MOSFET with Refractory Electrode

〇Kazuaki Yoshiura¹, Yusuke Teramura¹, Jun Morihara¹, Yoshiki Iba², Junya Yoshinaga^2,3, Yoshinao Kumagai², Takuya Tsutsumi¹, Masataka Higashiwaki¹ (1.Osaka Metropolitan Univ., 2.Tokyo Univ. of Agric. and Tech., 3.Nippon Sanso Corporation)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)English Presentation

[11p-A21-6]Suppression of Leakage Current Through the Interface of MOVPE Grown Epitaxial Layer and Semi-Insulating beta-Ga2O3 (010) Substrate by Fe-Ion Implantation

〇(PC)Sandeep Kumar¹, Yoshiki Iba², Junya Yoshinaga^2,3, Yoshinao Kumagai², Masataka Higashiwaki^4,1, Takafumi Kamimura¹ (1.NICT, 2.Tokyo Univ. of Agric. and Tech., 3.Nippon Sanso Corporation, 4.Osaka Metropolitan Univ.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A21-7]Effects of Post-Metallization Annealing on Interface Properties

〇Sora Kawai¹, Masahiro Hara¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.U Osaka)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A21-8]Photo C–V characterization of donor-compensating acceptor levels in β-Ga₂O₃ induced by oxygen annealing

〇Takumi Morita¹, Masahiro Hara¹, Ryota Yamada¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.UOsaka)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A21-9]3002 h Stable DC Operation of Diamond FETs with Surface Passivation

〇(M2)Yoshiki Muta¹, Niloy Chandra Saha¹, Masanori Eguchi², Makoto Kasu^1,3 (1.Diamond Semiconductor Research Center, Saga Univ., 2.Synchrotron Light Application Center, Saga Univ., 3.Diamond Semiconductor Co., Ltd.)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[11p-A21-10]Small-Signal Characteristics of Diamond Modulation-Doped FET with f_MAX = 54 GHz

Niloy Chandra Saha¹, Masanori Eguchi², Atsushi Tomiki³, 〇Makoto Kasu^1,4 (1.Diamond Semiconductor Research Center, Saga Univ., 2.Synchrotron Research Center, Saga Univ., 3.JAXA Institute of Space and Astronautical Science, 4.Diamond Semiconductor Co., Ltd.)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[11p-A21-11]X-Band (10 GHz) Large-Signal Characteristics of Diamond FET

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[11p-A21-12]Thermal-Induced Chemical Structural Evolution at Diamond/Silicon Interfaces Fabricated by Surface Activated Bonding

〇Yutaka Ohno¹, Hideto Yoshida², Jianbo Liang³, Koji Inoue⁴, Naoteru Shigekawa³ (1.TCEM, Tohoku Univ., 2.SANKEN, Univ. Osaka, 3.GSE, OMU, 4.IMR, Tohoku Univ.)

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